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专注专业务实创新技术致力于做国内最大的功率半导体器件的供应商
1、产品可靠性测试项目
全系列产品依照 JEDEC and AEC101标准通过半导体功率器件的可靠性測試
| Test Iteam | Description | Test Condition | Duration | Ref.Standard |
| PC | 预处理 |
Pre-test & V/M TMCL -> Bake Soak (MSL 1) IR Reflow Post-test & V/M |
Pre &Post- test | JESD22-A113 |
| ACLV(PCT) | 高压蒸煮试验 |
TA=121°C / 100%RH, Gauge Pressure 15 psig ; Unbiased. |
24/96 Hours | JESD22-A102 |
| HTSL | 高温贮存寿命试验 |
TA=150°C, or specified maximum storage temperature. |
168/500/1000 Hours | JESD22-A103 |
| RSH | 耐焊热试验 |
TA=260°C, 10 Sec. (for SMD) TA=270°C, 7 Sec. (for Thr-Hole) |
1 Cycle |
JESD22-A111 JESD22-B106 |
| TMCL(TCH) | 高低温温度循环试验 |
TA=-65°C to +150°C, dwell time 15min. (30min/cycle), Air to air |
100/500/1000 Cycles | JESD22-A104 |
| H3TRB(THB) | 高温高湿反偏试验 |
TA=85°C, 85%RH, 80% of rated BV ; or up to a maximum of 100V |
168/500/1000 Hours | JESD22-A101 |
| HTRB | 高温反偏试验 |
TA=150°C or specified max. Tj (T A is to be adjusted to compensate for leakage ) , 80% of rated BV |
168/500/1000 Hours | JESD22-A108 |
| HTGB |
高温栅偏试验(仅适用于MOSFET产品） |
TA=150°C or specified max. T； (T A is to be adjusted to compensate for leakage), 100% of rated VGS |
168/500/1000 Hours | JESD22-A108 |
| OPL | 工作寿命试验 | TA=25°C, max. power rating or powered to max. Tj | 168/500/1000 Hours | JESD22-A108 |
| IOL | 间歇工作寿命试验 | TA=25 0 C, ATj 2 100 〇 C, t 0N =t 0FF =2 min (or 3_5 min} | 2520/7500/15000 Cycles |
MIL-STD-750 Method 1037 |
2、产品可靠性测试报告
| Part Number | Reliability Test Report |
|---|---|
| DT8T35I |
|
| DT12T35I |
|
| DT16T35I |
|
| DT4T10F |
|
| DT16T35E |
|